Semiconductor laser
文献类型：专利
| 作者 | JINDOU MASAAKI |
| 发表日期 | 1989-09-26 |
| 专利号 | JP1989241885A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To dispense with a beam shaping or a condensing lens by disposing first, second and third regions in a concentrically adjacent manner, and disposing the third, first and second regions in this order from the center of the concentric circle outward. CONSTITUTION:A semiconductor laser is formed of a ringlike active region (first region) 1, Bragg's reflection (DBR) region (second region) 2 surrounding the region 1, and a grating photocoupler region (third region) 3 surrounded by the region 1, and disposed concentrically with respect to a central point 4. The region 3 is formed of an N-type GaAs substrate 5, an N-type Al0.35Ga0.65 As layer 6, a diffraction grating 11 having a concentric group symmetrical with respect to the center 4 and including a modulated period, a high resistance Al0.15Ga0.85As layer 12, and a high resistance Al0.35Ga0.65As layer 13, radiates a circular laser light perpendicularly to the face of an element through a grating photocoupler, thereby condensing it to one point. |
| 公开日期 | 1989-09-26 |
| 申请日期 | 1988-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | JINDOU MASAAKI. Semiconductor laser. JP1989241885A. 1989-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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