Semiconductor laser
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; MATSUMURA HIROYOSHI |
| 发表日期 | 1988-01-27 |
| 专利号 | JP1988019891A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an element structure suitable for mounting by scribing in such a way that the depth ranging from the position of a luminescent center to the bottom of each groove and the angle of one end face, which is decided by a step difference between a luminous end face and the face of a region other than that, become a specific value or more. CONSTITUTION:A working of end face grooves and a formation of a chip are performed in such a way that the angle (theta) of one end face becomes 60 degrees or more. That is, a Ga1-xAlxAs double hetero junction is grown into an epitaxial crystal 2 on an N-type GaAs substrate crystal, a resist is applied to a P-type electrode 3 and an N-type electrode 3, the pattern of an end face processing region is printed and developed and a striplike photo resist film 5 is formed. Then, the P-type electrode is etched away using the photo resist 5 as a mask and after the end face is processed by wet etching and an end face for luminous output talking-out of a laser is obtained, the photo resist 5 which becomes unnecessary is removed. Then, the point 11 of a scriber is applied to a place, where is a flat part provided at the end of a wafer and is on the extension line on one side of each groove performed an end face working, flaws are generated, the wafer is bent and a rectangular element can be made. |
| 公开日期 | 1988-01-27 |
| 申请日期 | 1986-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84442]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,MATSUMURA HIROYOSHI. Semiconductor laser. JP1988019891A. 1988-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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