Manufacture of semiconductor laser
文献类型：专利
| 作者 | KANEKO TADAO; YAMASHITA SHIGEO; KAJIMURA TAKASHI; YAMANAKA AKEMI |
| 发表日期 | 1989-06-09 |
| 专利号 | JP1989147883A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To produce a good semiconductor laser without the corner sections of the end faces of a laser resonator being etched, by a method wherein the end faces of the laser resonator with step section of 10mum or so are, for the one side thereof, smoothed at a specific angle. CONSTITUTION:In designing a mask, of a three layer structure, for the formation of the end faces of a laser resonator, a three layer mask is formed in which all the corner sections 11 of the end faces of the resonator are smoothed at an obtuse angle of more than 105 deg., for example at 135 deg. Next, the crystal body of a GaAs-GaAlAs hetero-structure is vertically etched up to the depth of 10mum by means of a reactive ion beam etching using chlorine gas to form reflecting surfaces of the resonator. Subsequently, after the coner sections thereof are coated with photoresist, when preventing trenches are etched by means of wet etching, the corner sections are not etched. After a substrate 1 is lapped, an n-side electrode 12 is formed on the rear thereof. As a result, a good semiconductor laser is produced. |
| 公开日期 | 1989-06-09 |
| 申请日期 | 1987-12-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84444]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | KANEKO TADAO,YAMASHITA SHIGEO,KAJIMURA TAKASHI,et al. Manufacture of semiconductor laser. JP1989147883A. 1989-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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