Semiconductor laser element
文献类型：专利
| 作者 | KANEIWA SHINJI |
| 发表日期 | 1991-07-26 |
| 专利号 | JP1991173488A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To improve heat dissipation to a heat sink without exerting adverse influence upon laser characteristics, by constituting a clad layer in such a way that the heat sink side part has a composition whose thermal conductivity is higher than the active layer side. CONSTITUTION:A semiconductor laser element has an active layer 13 and a clad layer 9 in a chip in contact with a heat sink 20, which clad layer is adjacent to the heat sink 20 side of the active layer 13. The clad layer 9 is constituted of a first clad layer 21 formed on the active layer 13 side and a second clad layer 22 formed on the heat sink 20 side. The thermal conductivity of a second clad layer 22 is higher than that of the first clad layer 2 The above active layer 13, the active layer side part 21 of the clad layer 9, and the heat sink 20 side part 22 of the clad layer 9 are composed of the following, respectively; Ga1-xAlxAs, Ga1-yAlyAs, and Ga1-zAlzAs, where x |
| 公开日期 | 1991-07-26 |
| 申请日期 | 1989-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84454]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KANEIWA SHINJI. Semiconductor laser element. JP1991173488A. 1991-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。