Surface emitting semiconductor laser device
文献类型：专利
| 作者 | YOKOUCHI, NORIYUKI; KASUKAWA, AKIHIKO |
| 发表日期 | 2002-03-14 |
| 专利号 | US20020031154A1 |
| 著作权人 | YOKOUCHI NORIYUKI |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting semiconductor laser device |
| 英文摘要 | A surface emitting semiconductor laser device has a layered structure of semiconductor materials formed on a substrate The layered structure has an upper reflector layered structure (5), a lower reflector layered structure (2), and a light-emitting layer (4) interposed therebetween. A current injection path (3e) is formed in close proximity to the light-emitting layer (4). An upper electrical contact (7a), which is annular in plan configuration, is formed on the upper surface of the upper reflector layered structure (5). The outside of the upper electrical contact (7a) is coated with a dielectric film (8) and a metallic film (9). The metallic film (9) is formed being in contact with the upper electrical contact (7a), and the inside of the upper electrical contact (7a) serves as a laser light emission window. The peripheral rim portion (6c) of the emission window is coated with the metallic film (9) to define the aperture diameter of the emission window (6A) by the metallic film (9), thereby controlling the lateral lasing mode of laser light. The aperture diameter (D0) of the emission window (6A) is made smaller than the aperture diameter (D1) of the current injection path (3e) and the aperture diameter (D1) of the current injection path is greater than 10 micrometers. |
| 公开日期 | 2002-03-14 |
| 申请日期 | 2001-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84457]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | YOKOUCHI NORIYUKI |
| 推荐引用方式 GB/T 7714 | YOKOUCHI, NORIYUKI,KASUKAWA, AKIHIKO. Surface emitting semiconductor laser device. US20020031154A1. 2002-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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