Semiconductor luminescent device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; OKAZAKI JIROU |
| 发表日期 | 1985-12-23 |
| 专利号 | JP1985260183A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminescent device |
| 英文摘要 | PURPOSE:To obtain a semiconductor luminescent device having a low threshold value, high efficiency and high output, and furthermore, having a good far field pattern as well by a method wherein current is concentratedly run to the active region making a difference of resistivity among the InP layers on the (N) side and the active region is dropped in the V-shaped groove. CONSTITUTION:An N type InP layer 2 is deposited covering a striped protrusion on an N type InP layer 1 having the striped protrusion with the N type InP layer 2 and as a semiconductor layer having a resistivity higher than that of the N type InP layer A V-shaped groove 6 is carved in the N type InP layer 2 on the striped protrusion in such a way as to reach into the N type InP layer This semiconductor luminescent device is made into a structure, wherein an N type InP layer 7, an InGaAsP layer to be used as an active layer 3 and a P type InP layer 4 are deposited in this groove 6. The light emission is performed by a double hetero-junction, which is constituted holding the active layer 3, which is the InGaAsP layer, between the N type InP layer 7 and the P type InP layer 4. |
| 公开日期 | 1985-12-23 |
| 申请日期 | 1984-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84459]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,OKAZAKI JIROU. Semiconductor luminescent device. JP1985260183A. 1985-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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