Semiconductor laser
文献类型：专利
| 作者 | OGAWA HIROSHI; HASHIMOTO AKIHIRO; IMANAKA KOICHI; SANO KAZUYA |
| 发表日期 | 1986-06-04 |
| 专利号 | JP1986116894A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of long life with less deterioration by forming a GaInAsP distortion absorbing layer having a larger band gap than the active layer on the upside clad layer when laminating a lower InP clad layer, a GaInAsP active layer, an upper InP clad layer on an InP substrate to form a semiconductor laser. CONSTITUTION:A P type InP layer 2, an N type InP block layer 3, a P type InP layer 4 are laminated and epitaxially grown on a P type InP substrate 1, and a V-shaped groove 5 of sectional shape intruded from the center of the surface of the layer 4 to the layer 2 is opened. Then, a P type InP lower clad layer 6, a P type GeInAsP active layer 7, and an N type InP upper clad layer 8 are similarly laminated, epitaxially grown while insulating between the surface of the remaining layer 4 and the bottom of the groove 5, and an N type GaInAsP distortion absorbing layer 11 having a larger band gap than the layer 7 is accumulated on the overall surface while burying the excess recess of the groove 5. Thus, the distortions generated in the layers 8, 7, 6 in the groove 5 are absorbed to the layer 11, and a lateral basic mode oscillation is stabilized with low threshold value. |
| 公开日期 | 1986-06-04 |
| 申请日期 | 1984-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84460]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGAWA HIROSHI,HASHIMOTO AKIHIRO,IMANAKA KOICHI,et al. Semiconductor laser. JP1986116894A. 1986-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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