Semiconductor laser element
文献类型：专利
| 作者 | TSUNEKANE MASAKI |
| 发表日期 | 1991-05-02 |
| 专利号 | JP1991106090A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element which is high in yield and reliability, to restrain a surface level from being formed in an active layer at an end face as making the most of the feature of a laser structure, and to enable oscillation light not to be absorbed at the end face by a method wherein a semiconductor layer of high resistance whose forbidden band is larger than that of an active layer is provided to a cleavage plane vertical to a direction in which a resonator is provided. CONSTITUTION:A semiconductor layer 1 of high resistance whose forbidded band is larger than that of an active layer 5 is provided to a cleavage plane 2 vertical to a direction in which a resonator is provided. Therefore, the control of etching in depth and shape is not required, so that a semiconductor laser element becomes high in yield. Moreover, the cleavage plane 2 is free of contamination caused by an etching solution and flat of the order of an atomic layer, so that an interface between the active layer 5 and a semiconductor protective film is excellent in crystallinity and small in interface level and improved in reliability. The face of the semiconductor protective film is vertical to a direction in which an optical waveguide extends, so that the reduction of an optical coupling efficiency is small, and consequently the increase of a threshold current and the reduction of an emission efficiency can be minimized. By this setup, as the semiconductor protective film is of high resistance, the leakage current of a PN semiconductor layer through the intermediary of the film concerned hardly occurs, so that a semiconductor laser element of this design is prevented from deteriorating in characteristics and the absorption of oscillation light can be eliminated by using a semiconductor layer large in forbidden band. |
| 公开日期 | 1991-05-02 |
| 申请日期 | 1989-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKANE MASAKI. Semiconductor laser element. JP1991106090A. 1991-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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