Semiconductor laser and method for manufacturing the same
文献类型：专利
| 作者 | TATSUHIKO, NIINA; KEIICHI, YODOSHI |
| 发表日期 | 1988-12-07 |
| 专利号 | EP0091599B1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for manufacturing the same |
| 英文摘要 | A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A buried layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy. |
| 公开日期 | 1988-12-07 |
| 申请日期 | 1983-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84472]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | TATSUHIKO, NIINA,KEIICHI, YODOSHI. Semiconductor laser and method for manufacturing the same. EP0091599B1. 1988-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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