Semiconductor light emitting device
文献类型：专利
| 作者 | TAKEUCHI HIROAKI; MATSUMOTO SHINICHI |
| 发表日期 | 1992-12-01 |
| 专利号 | JP1992345081A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To realize an integrated light source wherein electric isolation resistance between a laser and a modulator is sufficiently large, and light loss caused by the structure for isolation is extremely small, in a distributed feedback type laser and an absorption type optical modulator bar voltage application, and obtain a semiconductor light emitting device capable of remarkably increasing the capacity of an optical communication channel. CONSTITUTION:Two conductive semiconductor layers 2, 3 spacially isolated are formed in the vicinity of the surface of a semi-insulating semiconductor substrate. On the conductive semiconductor layer 2 of one side, a distributed feedback type laser composed of the following is formed; a waveguide layer 5, an active layer 6 of a first multiple quantum well structure, a waveguide layer 8 having a diffraction grating on the surface, and a clad layer 9. On the conductive semiconductor layer 3 of the other side, an absorption type optical modulator by voltage application composed of the following is formed; a waveguide core layer 7 of a second multiple quantum well structure, and a clad layer 9. The above feedback type laser and optical modulator are constituted so as to form a common stripe, thus obtaining the title semiconductor light emitting device. |
| 公开日期 | 1992-12-01 |
| 申请日期 | 1991-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84476]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | TAKEUCHI HIROAKI,MATSUMOTO SHINICHI. Semiconductor light emitting device. JP1992345081A. 1992-12-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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