Distributed feedback semiconductor laser device
文献类型：专利
| 作者 | UNO TOMOAKI; MATSUI YASUSHI |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989218088A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain stable oscillations, by forming a phase-shifting structure after making the presence of a diffraction grating produce an effective refraction index difference and making the probability of oscillating a single longitudinal mode approach one, thereby removing the diffraction grating where the electric field strength of light grows intense in the vicinity of its center part. CONSTITUTION:A clad layer 11 consists of a P-type InP layer; an active layer 12 consists of an InGaAsP layer; a waveguide layer 13 consist of an InGaAsP layer; and a clad layer 14 consists of InP substrate and then, a diffraction grating 15 has its cycle 4000Angstrom and a depth 2000Angstrom . Thus, a distributed feedback semiconductor laser device is composed of above elements. The effective refraction index which is susceptive to a laser beam is 3.306 at a region equipped with the diffraction grating 15 and is 3.300 at the region 16 without being equipped with the diffraction grating. Then, a phase-shifting structure is obtained by setting the length L of the region 16 which is free from the diffraction grating within the range of 27.1<=L<=54.2mum. Thus, the intensity of light distributes itself almost flat throughout the region 16 which is free from the diffraction grating. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84477]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | UNO TOMOAKI,MATSUI YASUSHI. Distributed feedback semiconductor laser device. JP1989218088A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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