Semiconductor laser
文献类型：专利
| 作者 | OE KUNISHIGE; FUKUDA MITSUO |
| 发表日期 | 1990-04-18 |
| 专利号 | JP1990106081A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To assure the lower capacity and the higher output at low threshold value by a method wherein current guide layers making intermediate band gaps are provided between an active layer and a clad layer formed on a substrate. CONSTITUTION:When current is fed from a p type InP layer 26 to an n type InP layer 28, the current is fed to the whole layers i.e., a GaInAsP current guide layer 22, a GaInAsP active layer 23, another GaInAsP current guide layer 24. Furthermore, all the current fed to the GaInAsP current guide layers 22, 24 can contribute to the luminescent recoupling by the lock up effect of carrier between a high resistant Fe-doped InP substrate 21 and a non-doped InP clad layer or a high resistant Fe-doped InP clad layer 25 by the InP layers 26, 28. Through these procedures, the higher output and the lower capacity can be assured at low threshold value by introducing the GaInAsP current layers 22, 24. |
| 公开日期 | 1990-04-18 |
| 申请日期 | 1988-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84478]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OE KUNISHIGE,FUKUDA MITSUO. Semiconductor laser. JP1990106081A. 1990-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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