Visible light semiconductor laser
文献类型：专利
| 作者 | KAMIYAMA SATOSHI; MANNOU MASAYA |
| 发表日期 | 1992-05-15 |
| 专利号 | JP1992142093A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a low aspect ratio by selectively etching a second clad layer to form residual films on a ridge stripe and at both sides of the stripe, forming an opposite conductivity type current narrowing layer thereon, and providing an opposite conductivity type cap layer on the stripe and the narrowing layer. CONSTITUTION:A one conductivity type first clad layer 4, an active layer and an opposite conductivity type second clad layer 2 having a low resistivity of 0.5OMEGAcm or less are laminated on a semiconductor substrate 11, the layer 2 is selectively etched to form a residual film of 0.1mum or less of thickness on a ridge stripe and at both sides of the stripe. An opposite conductivity type current narrowing layer 17 is formed on the residual film, and an opposite conductivity type cap layer 18 is provided on the stripe 6 and the layer 17. Thus, a visible light semiconductor laser having a low threshold value current and 2.5 or less of an aspect ratio is obtained. |
| 公开日期 | 1992-05-15 |
| 申请日期 | 1990-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84487]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAMIYAMA SATOSHI,MANNOU MASAYA. Visible light semiconductor laser. JP1992142093A. 1992-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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