Semiconductor laser device
文献类型：专利
| 作者 | TANEYA, MOTOTAKA; YAMASAKI, YUKIO; ITO, SHIGETOSHI |
| 发表日期 | 2005-10-13 |
| 专利号 | US20050226295A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2<(nc1, nc3) |
| 公开日期 | 2005-10-13 |
| 申请日期 | 2003-03-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TANEYA, MOTOTAKA,YAMASAKI, YUKIO,ITO, SHIGETOSHI. Semiconductor laser device. US20050226295A1. 2005-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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