Semiconductor light emitting device
文献类型：专利
| 作者 | ASANO, HIDEKI |
| 发表日期 | 2011-09-20 |
| 专利号 | US8023545 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided. |
| 公开日期 | 2011-09-20 |
| 申请日期 | 2008-12-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84496]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, HIDEKI. Semiconductor light emitting device. US8023545. 2011-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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