Manufacture of semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078277A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability and reproducibility by burying a light wave guide path with II-IV compound semiconductor, and forming a resist layer of specified thickness, and then etching it by RIBE. CONSTITUTION:An n-GaAs buffer layer 102, an n-Al0.5Ga0.5As clad layer 103, an Al0.15Ga0.85As active layer 104, a p-Al0.5Ga0.5As clad layer 105, and a p-GaAs contact layer 106 are stacked in order on an n-GaAs substrate 101 so as to form a substrate in DH structure. This is etched to the middle of the layer 105 through a mask such as SiO2, etc., so as to form a ribshaped light wave guide path having height tr. ZnSe is grown, and at the flat part excluding the rib region, single crystal ZnSe having thickness tp, and on the light wave guide path, polycrystalline ZnSe having thickness ta, are formed. Resist 110 is formed at the surface, and the thickness is made larger than tp+tr-ta so as to flaten it. After etching it by RIBE, a P-type electrode 111 and an N-type electrode 112 are formed. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84513]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Manufacture of semiconductor laser. JP1991078277A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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