Semiconductor laser
文献类型：专利
| 作者 | YOSHIDA, ICHIRO |
| 发表日期 | 1993-12-28 |
| 专利号 | US5274656 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD., A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A p-clad layer constituting the semiconductor laser device according to this invention includes an inner clad area near an active layer, and an outer clad area remote from the active layer. The outer clad area has a narrower bandgap than that of the inner clad area, the thickness and the composition of the inner clad area are so set that beams do not substantially exude from the active layer to the outer clad area. A multi-quantum barrier structure can be provided between the active layer and the p-clad layer. At least one of barrier layers of the multi-quantum barrier structure is formed of a material which applies tensile stress thereto, and at least one well layer, provided between one of the barrier layers and its adjacent one, is formed of a material which applies contraction stress thereto, whereby an average lattice constant of the multi-quantum barrier agrees with that of the substrate. The material in the barrier layers allows the bandgap thereof to be sufficiently wide. Consequently even in comparatively high-temperature environments, carriers, especially electrons, can be prevented from overflowing from the active layer to the clad layers, and no deterioration of the characteristics takes place. |
| 公开日期 | 1993-12-28 |
| 申请日期 | 1992-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84517]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD., A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | YOSHIDA, ICHIRO. Semiconductor laser. US5274656. 1993-12-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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