Manufacture of semiconductor laser
文献类型：专利
| 作者 | NISHIMURA TAKASHI |
| 发表日期 | 1988-04-04 |
| 专利号 | JP1988073686A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form the surface of a grown layer in a mirror-state thereby to eliminate a meltback from an InGaAsP active layer and to easily control the composition and the thickness of the film of InGaAsP by forming at least one conductivity type InP clad layer, an InGaAsP active layer and a second conductivity type InP clad layer by a vapor growth method. CONSTITUTION:After a clad layer 10 is formed in an arrowtail-like groove 13 which arrives at the end at a buffer layer 2 from a block layer 4, an active layer 9 is formed on the layer 10. Then, a clad layer 5 is formed similarly by a vapor growing method on the layers 9, 4. That is, since the layers 10, 9, 5 are formed by the vapor growing method in the groove 13 formed in a direction , the layers 10, 9 are selectively formed in the groove 13, the homologue of the surface of the grown layer is improved, a meltback from the layer 9 is eliminated, and the composition and the thickness of the film of the InGaAsP can be easily controlled. |
| 公开日期 | 1988-04-04 |
| 申请日期 | 1986-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84531]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMURA TAKASHI. Manufacture of semiconductor laser. JP1988073686A. 1988-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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