Semiconductor laser
文献类型：专利
| 作者 | OHIRA, KAZUYA; YOSHIDA, HARUHIKO; EZAKI, MIZUNORI |
| 发表日期 | 2013-12-17 |
| 专利号 | US8611392 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes. |
| 公开日期 | 2013-12-17 |
| 申请日期 | 2011-03-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | OHIRA, KAZUYA,YOSHIDA, HARUHIKO,EZAKI, MIZUNORI. Semiconductor laser. US8611392. 2013-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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