Semiconductor laser apparatus
文献类型：专利
| 作者 | ISSHIKI, KUNIHIKO; SUSAKI, WATARU |
| 发表日期 | 1988-07-12 |
| 专利号 | US4757509 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser apparatus |
| 英文摘要 | Laser light guided by a coupled waveguide (formed by difference in refractive index between n-type and p-type AlGaAs clad layers (2) and (4) and an undoped AlGaAs active layer (3) and difference in refractive index between the p-type AlGaAs clad layers (4) and (7) and a p-type AlGaAs waveguide layer (6)) is guided only by the p-type AlGaAs waveguide layer (6) in the vicinity of end surfaces (40, 42), not to be coupled with the undoped AlGaAs active layer (3). Therefore, surface regions of the end surfaces (40, 42) reflecting the laser light are formed by the p-type AlGaAs clad layers (4, 7) and the p-type AlGaAs waveguide layer (6) being larger in forbidden bandwidth. |
| 公开日期 | 1988-07-12 |
| 申请日期 | 1986-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ISSHIKI, KUNIHIKO,SUSAKI, WATARU. Semiconductor laser apparatus. US4757509. 1988-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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