Semiconductor laser device
文献类型：专利
| 作者 | ARIMOTO AKIRA; KAYANE NAOKI; OSHIMA MASAHIRO; SAITOU SUSUMU; TAKAHASHI TAKEO |
| 发表日期 | 1983-07-02 |
| 专利号 | JP1983111393A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the noises of the semiconductor laser device oscillating in a single mode by controlling the space of a resonator in response to a temperature change and conforming the space of the resonator to a temperature change in central wavelength of the gain distribution of a laser medium. CONSTITUTION:A non-reflecting coating 2 is formed to one end surface of a semiconductor laser 1, a reflecting mirror 3 to which a piezo-element 4 is attached is set up opposed to the coating, and the resonator of the device is constituted by the other end surface 5 of the laser element 1 and the reflecting mirror 3. The piezo-element 4 is driven so as to conform to the change of the gain distribution of the laser element in response to a temperature change, and moved in parallel with the end surface of the laser element 1, thus fixing the oscillating mode of laser beams. |
| 公开日期 | 1983-07-02 |
| 申请日期 | 1981-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84537]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ARIMOTO AKIRA,KAYANE NAOKI,OSHIMA MASAHIRO,et al. Semiconductor laser device. JP1983111393A. 1983-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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