Semiconductor laser and its manufacture
文献类型：专利
| 作者 | UEDA OSAMU; KOTANI TAKESHI |
| 发表日期 | 1983-08-05 |
| 专利号 | JP1983131789A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To enable single mode oscillation, in which the shape of a buried active layer is formed in a vertical bilateral symmetrical shape by semiconductor laser structure with the buried active layer, a section thereof takes a convex lens shape, and to obtain a laser spot close to a point. CONSTITUTION:Manufacture of the titled device is as follows. A striped groove 32 is formed onto epitaxial layers 21, 22, 23 grown onto an n-InP substrate 21 in succession, and a layer which must function as a clad layer 24 is grown onto the groove so that a sectional shape in the groove 32 takes a concave surface form. A layer which must function as the active layer 25 is grown onto the layer which must function as the clad layer 24, a protective mask 33 narrower than stripe width is formed at the center of the stripe section of the surface, and the section of the active layer 25 is formed to a convex lens shape through etching from the upper surface of the mask. The film 33 is removed through etching, a clad layer 26 and a constricted current layer 27 are grown through a liquid epitaxial growth method again, cadmium (Cd) is diffused and p-type region is formed, a p-type electrode and an n-type electrode are formed, and the laser element is completed. |
| 公开日期 | 1983-08-05 |
| 申请日期 | 1982-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84540]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU,KOTANI TAKESHI. Semiconductor laser and its manufacture. JP1983131789A. 1983-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。