Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO; NITSUTA SHIGEYUKI; TANAKA TOSHIO |
| 发表日期 | 1983-02-19 |
| 专利号 | JP1983028887A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To produce a lateral junction stripe (TJS) laser which is of proper lateral beam angle and of lower thershold current by maintaining the carrier density of an n type region at 4X10/cm-1X10/cm. CONSTITUTION:An active region is located between p type and n type regions so that lateral beam angles of a TJS laser is determined by refractive indexes of the active region 10, p type region 6 and n type region 7. Increase in difference between the refractive index values of the active and n type regions by decreasing the refractive index of the n type region results in widening of the beam angle. As shown in the figure, the higher carrier density, the smaller refractive index of the n type region at its carrier density of 5X10/cm or more so that the higher carrier density of the n type region, the wider lateral beam angle. In this actual instance, the beam angle of 17 deg. can be obtained at the carrier density of the n type region at 4X10/cm-1X10/cm. Moreover, another advantage from widening of the carrier density of the n type region is that value of the threshold current becomes lower. |
| 公开日期 | 1983-02-19 |
| 申请日期 | 1981-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84541]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,NITSUTA SHIGEYUKI,TANAKA TOSHIO. Semiconductor laser. JP1983028887A. 1983-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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