Manufacture of buried type semiconductor laser
文献类型：专利
| 作者 | FURUYAMA HIDETO; KUROBE ATSUSHI; NARIZUKA SHIGEYA |
| 发表日期 | 1988-06-18 |
| 专利号 | JP1988146480A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried type semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the influence of a high concentration layer in the vicinity of a diffusion surface, by growing crystal of low refractive index on a surface from which a high concentration diffusion region is eliminated by etching. CONSTITUTION:On an N-type GaAs substrate 1, the following are grown; an N-type Al0.48Ga0.52As clad layer 2, a quantum well active layer 3, a P-type Al0.48Ga0.52As clad layer 4, and a P-type GaAs contact layer 5. An impurity diffusion layer 6 is formed, and thereon a self-oxide film of constitutional crystal is formed. The diffusion layer is eliminated by repeating oxidizing and eliminating process 3-4 times. After that, the second crystal growth is performed on the surface from which the above elimination is finished. By forming the second crystal growth layer as N-type, a residual diffusion layer 6 serves as a current confinement layer, and constricts the current. Then electrode metals 8 and 9 are formed. |
| 公开日期 | 1988-06-18 |
| 申请日期 | 1986-12-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,KUROBE ATSUSHI,NARIZUKA SHIGEYA. Manufacture of buried type semiconductor laser. JP1988146480A. 1988-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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