Semiconductor laser device
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1992-05-07 |
| 专利号 | JP1992133485A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate restrictions on a semiconductor laser device in laser structure so as to obtain the semiconductor laser device free from light loss by a method wherein a nonreflective coating material is provided to the opposed cleavage planes of a semiconductor laser element and an optical waveguide element respectively, and the semiconductor laser element and the optical waveguide element are mounted on a substrate. CONSTITUTION:A nonreflective coating material 30 of amorphous silicon is provided onto the opposed cleavage planes of a semiconductor laser element 10 and an optical waveguide element 20 independently provided. The other side of the semiconductor laser element 10 is coated with an aluminum oxide Al2O2 31, and the other side of the optical waveguide element 20 is coated with an amorphous silicon 32. The semiconductor laser element 10 and the optical waveguide element 20 are formed into one piece through the intermediary of the nonreflective coating material 30, and the assembly concerned is fixed onto a silicon substrate 34 through the intermediary of an indium (In) layer 33, whereby a hybrid integrated DBR semiconductor laser device can be obtained. |
| 公开日期 | 1992-05-07 |
| 申请日期 | 1990-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84546]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Semiconductor laser device. JP1992133485A. 1992-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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