Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SUDO HISAO |
| 发表日期 | 1986-06-12 |
| 专利号 | JP1986125099A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce the magnitude of wet current, by reducing the difference in steps between the interface between an active layer and a clad layer and a junction plane, which stops the current. CONSTITUTION:On a substrate 1a, on which grating is formed, a guide layer 2, an active layer 3 and a P type InP layer 4a are formed. A stripe shaped SiO2 insulating film 13 is formed thereon. Then selective etching is performed. By using the substrate 1a as a stopper, the surface remains approximately flat. Then, a P type InGaAsP layer 7 and an N type InP layer 8a are grown, and a block layer 9a is formed. At this time, since the growing of the surface of the insulating film 13 is stopped, general height of the P type InGaAsP layer 7a is made higher than the P type InP layer 4. Even if the height is slightly changed, the height of the P type InGaAsP layer 7a at the side end of the insulating film 13 approximately agrees with the height of the P type InP layer 4a. At the N type InP layer 8a, the height of the side end of the insulating film 13 becomes the same. After the insulating film 13 is removed, a P type InP layer 4b and a contact layer 5a are grown, electrodes 11 and 12 are deposited and a DFB laser can be formed. |
| 公开日期 | 1986-06-12 |
| 申请日期 | 1984-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84547]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SUDO HISAO. Semiconductor laser and manufacture thereof. JP1986125099A. 1986-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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