Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HOSHINA JUNICHI; OGURA MOTOTSUGU |
| 发表日期 | 1989-06-12 |
| 专利号 | JP1989149500A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To limit an oscillating part to a extremely narrow region so as not only to ensure an excellent property but also simplify a process by a method wherein a stripe-like groove is formed onto the surface of a semiconductor substrate and laser rays are irradiated onto the groove so as to enable a clad layer on the groove to thicker than a clad layer on the other region. CONSTITUTION:An n-type GaAs substrate 1 is provided and a stripe-like pattern mask is formed on one of its primary faces at a required pitch. And, the substrate 1 is etched making use of this mask. Next, a double hetero structure is formed on the n-type GaAs substrate 1 provided with the stripe-like groove through a laser ray irradiation. Next, laser rays are irradiated only onto the stripe-like groove region formed on the surface of the n-type GaAs substrate 1 and the region irradiated by laser rays 3 is made to be higher than the other region in a growth rate and impurity density. By these processes, an n- Ga1-xAl1-xAs layer 2 of a flat n-type clad layer with an epitaxial surface is formed, and a clad layer containing impurity high in concentration is formed on a region above the groove. Therefore, a current is efficiently restrained from spreading, so that a laser emitting section can be limited to an extremely narrow region. |
| 公开日期 | 1989-06-12 |
| 申请日期 | 1987-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84549]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSHINA JUNICHI,OGURA MOTOTSUGU. Manufacture of semiconductor laser device. JP1989149500A. 1989-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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