Semiconductor laser device
文献类型：专利
| 作者 | NAKANO MUNEAKI; WADA MASARU |
| 发表日期 | 1989-08-14 |
| 专利号 | JP1989201981A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress mode hopping noise by making current injection region to be discontinuous so that no current may be injection partially in the direction of cavity. CONSTITUTION:Two parallel ridges are formed in the direction of by etching sandwiching a groove on an n-type GaAs substrate 2 of orientation crystal surface 100. A clad layer 3 by n type GaAlAs is formed on ridge above it by the liquid phase epitaxial method, an active layer 4 by non-dope GaAlAs is formed at the same place, and then a clad layer 5 by p type GaAlAs and a cap layer 6 by n-type GaAs are allowed to grow continuously. Then, after forming a stripe shape mask on the cap layer 6 by a nitride film 9 leaving the central part partially, zinc is diffused and a zinc diffusion region 7 is formed. And then, the nitriding film 9 is removed and electrodes 1 and 8 are formed. It allows noise level to be reduced by self pulsation. |
| 公开日期 | 1989-08-14 |
| 申请日期 | 1988-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84560]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKANO MUNEAKI,WADA MASARU. Semiconductor laser device. JP1989201981A. 1989-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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