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文献类型：专利
| 作者 | SUGIMOTO MITSUNORI |
| 发表日期 | 1993-03-18 |
| 专利号 | JP1993019997B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To integrate a light emitting semiconductor element and a transistor in the similar area to a normal light emitting semiconductor element by superposing the element and the transistor in the thicknesswise direction. CONSTITUTION:A semiconductor laser composed of a P-type clad layer 2, an active layer 3 and an N-type clad layer 4, and a transistor composed of an N-type clad layer 4, a base layer 5 and an emitter layer 6 are integrated in a laminar direction. Since the height of a triangular potential barrier with the base layer as a vertex can be varied by a voltage applied to the layer 5, an electron current injected to the layer 3 can be controlled. Since the thick ness of the layer 5 is very thin as approx. twice of the electron mean free stroke, it loses its energy due to lattice scattering, the electrons which drop into the potential well of the base layer are almost none, and most electrons are considered to pass the layer 5. Thus, the mutual conductance of the transis tor composed of the layers 4, 5, 6 is very large to significantly vary the current injected into the layer 3. |
| 公开日期 | 1993-03-18 |
| 申请日期 | 1985-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84567]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SUGIMOTO MITSUNORI. -. JP1993019997B2. 1993-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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