Semiconductor laser
文献类型：专利
| 作者 | NOMURA YOSHITOKU; OGATA HITOSHI |
| 发表日期 | 1990-10-03 |
| 专利号 | JP1990248095A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve a semiconductor laser of this design in external quantum efficiency and differential gain by a method wherein the energy band levels of an active layers, a P-side clad layer, and an N-side clad layer on a valence band are made to become higher than that of the following layer respectively in this sequence, and the conduction band lower end levels of the P-side clad layer, the N-side clad layer, and the active layer are made to become higher than that of the following layer respectively in this sequence. CONSTITUTION:When a forward bias voltage is applied to electrodes 1 and 2, electrons and holes are injected into a multiquantum well layer 3 through diffusion and recombined with radiation. The radiation concerned is conducive to laser oscillation. Even if carriers are injected high in concentration, the potential level of a P-side clad layer 4 is higher than the energy level of the injected electrons and the potential level of an N-side clad layer 5 is higher than the energy level of the injected holes, so that electrons and holes are prevented from entering each other's clad layer. Therefore, the recombination of carriers and a noneffective current do not occur in the layer 4 or the layer 5, in result a laser of this design can be improved in external quantum efficiency and differential gain. |
| 公开日期 | 1990-10-03 |
| 申请日期 | 1989-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | NOMURA YOSHITOKU,OGATA HITOSHI. Semiconductor laser. JP1990248095A. 1990-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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