Semiconductor laser device
文献类型：专利
| 作者 | TOKUDA YASUKI; FUJIWARA KENZO; MITSUNAGA KAZUMASA; KOJIMA KEISUKE; OTA ATSUSHI; KAMETANI MASAAKI |
| 发表日期 | 1988-07-05 |
| 专利号 | JP1988161689A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To give a beam condensation function or a beam deflection function to a semiconductor laser and control those functions easily by a method wherein a region where no contact layer exists is provided near the front end surface of the laser element and a light is applied to the region partially or selectively from the outside. CONSTITUTION:A contact layer near the front end surface of a laser element is removed and a light applied from the outside is absorbed by a P-type cladding layer 5 and an active layer 6 easily. In other words, when the light is applied, it is absorbed by the active layer 6 or the cladding layer 5 and light excited carriers are created. As the upper center part of the active layer 6 is shielded from the light by a slit plate 10 and the light is not applied to that part, the carrier distribution in the active layer 6 is large in the left and right parts to which the light is applied. Therefore, the refractive index of the center part is large and the refractive indices of the left and right parts are small. If a current is applied to a laser to induce a laser oscillation in this state, beams are condensed. The carrier distribution can be controlled by the intensity and wavelength of the applied light. |
| 公开日期 | 1988-07-05 |
| 申请日期 | 1986-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84569]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TOKUDA YASUKI,FUJIWARA KENZO,MITSUNAGA KAZUMASA,et al. Semiconductor laser device. JP1988161689A. 1988-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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