Manufacture of semiconductor laser
文献类型：专利
| 作者 | YAJIMA KAZUO |
| 发表日期 | 1988-05-27 |
| 专利号 | JP1988124492A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To conduct a prober test precisely while removing a defect section such as a stepped section by cleavage by injecting protons into a chip dividing region rectangular to a light-emitting surface and increasing resistance. CONSTITUTION:A current block layer 2, a clad layer 3, an active layer 4, etc. are grown in an epitaxial manner and formed onto a substrate Gold patterns 15 are shaped, and protons arc injected into exposed chip dividing regions. A crystal is broken by injecting protons, and the resistance of proton injecting regions 20 is increased. Electrodes 7, 8 are shaped, and cloven to arrays, and a prober test by a probe 14 is performed. Consequently, the injection regions 20 having high resistance are interposed among laser elements, thus accurately conducting the prober test without errors. Cleavage planes are also changed into a uniform mirror surface, thus removing a defective section such as a stepped section by cleavage. |
| 公开日期 | 1988-05-27 |
| 申请日期 | 1986-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAJIMA KAZUO. Manufacture of semiconductor laser. JP1988124492A. 1988-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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