Heterostructure laser
文献类型：专利
| 作者 | HASENBERG, THOMAS C.; GARMIRE, ELSA M. |
| 发表日期 | 1988-11-29 |
| 专利号 | US4788688 |
| 著作权人 | UNIVERSITY OF SOUTHERN CALIFORNIA, UNIVERSITY PARK, LOS ANGELES, CALIFORNIA, 90089, A CA. CORP. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Heterostructure laser |
| 英文摘要 | A semiconductor laser of the heterostructure type is grown on a p-type substrate and has a plurality of p-type active layers. In a preferred embodiment, the active layers are grown by liquid phase epitaxy from a single melt which is maintained just below its equilibrium temperature and is cooled very slowly during deposition. As a result, the active layers are substantially identical in composition and have a very low lattice mismatch. They emit light at characteristic wavelengths within 50 angstroms of each other, indicating that their modal gain envelopes coincide. This condition minimizes the threshold current. |
| 公开日期 | 1988-11-29 |
| 申请日期 | 1986-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84580]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNIVERSITY OF SOUTHERN CALIFORNIA, UNIVERSITY PARK, LOS ANGELES, CALIFORNIA, 90089, A CA. CORP. |
| 推荐引用方式 GB/T 7714 | HASENBERG, THOMAS C.,GARMIRE, ELSA M.. Heterostructure laser. US4788688. 1988-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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