半導体レ-ザ装置
文献类型：专利
| 作者 | 黒田 崇郎; 渡辺 明禎; 辻 伸二; 大石 昭夫; 松村 宏善 |
| 发表日期 | 1996-03-04 |
| 专利号 | JP1996021748B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To stably oscillate in a long wavelength range or in a short wavelength range by using a binary or ternary mixed crystal superlattice structure instead of a quarternary mixed crystal layer matched in lattice to a group III-V 2-element mixed crystal substrate such as GaAS. CONSTITUTION:An N-type InP clad layer, an undoped quantum well active layer, a P-type InP clad layer are sequentially grown on an n+-InP substrate. The well layer is a single layer of In0.53Ga0.47As, and InP/In0.53Ga0.47As superlattice is used for a barrier layer. The thickness dB of one group of the superlattice for forming the barrier layer is see to dBapprox.=84-112Angstrom so as not to cause electrons in the wells of multiple quantum wells to tunnel. After this crystal is mesa etched, a buried layer is manufactured by a liquid-phase growing method. The, in a wavelength range of 3-55mum approximately a half of the threshold current value of InGaAsP/InP laser by the normal liquid-phase growing method is obtained to provide an element of excellent temperature characteristic. |
| 公开日期 | 1996-03-04 |
| 申请日期 | 1985-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 黒田 崇郎,渡辺 明禎,辻 伸二,等. 半導体レ-ザ装置. JP1996021748B2. 1996-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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