Semiconductor light element
文献类型：专利
| 作者 | KAWAI YOSHIO; SANO KAZUYA; WATANABE AKIRA; HORIKAWA HIDEAKI |
| 发表日期 | 1986-07-26 |
| 专利号 | JP1986166186A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light element |
| 英文摘要 | PURPOSE:To enhance the light emitting efficiency by reducing the value of the composition of a buffer layer in a direction of a substrate side from a double hetero structure side. CONSTITUTION:The material of a buffer layer 2 is formed of AlzGa1-zAs, and the value of the composition (z) is set to reduce from a double hetero structure side in the direction of the side of a substrate In this case, the value of the composition (z) is distributed to linearly reduce from a clad layer 4 to the substrate This composition (z) is gradually varied from GaAs of z=0 of the substrate 1 to z=x of AlGa1-xAs of the layer 4. According to this type, the function of producing and returning the light advanced from an active layer to the substrate side effectively in the direction of a window, the conversion efficiency of externally producing the light can be enhanced. |
| 公开日期 | 1986-07-26 |
| 申请日期 | 1985-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84590]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAWAI YOSHIO,SANO KAZUYA,WATANABE AKIRA,et al. Semiconductor light element. JP1986166186A. 1986-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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