半導体素子
文献类型：专利
| 作者 | 近藤 正彦; 皆川 重量 |
| 发表日期 | 1997-05-02 |
| 专利号 | JP2641484B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体素子 |
| 英文摘要 | PURPOSE:To suppress the generation of a natural lattice and to implement the short wavelength in an AlGaInP laser, by providing a crystal substrate having the surface orientation of (n11) or the surface orientation which is deviated from said orientation within a specified angle, end providing mixed crystal semiconductor layers having a disordered alignment structure which is epitaxially formed on the substrate. CONSTITUTION:A crystal substrate 1 has the surface orientation of (n11) [where, 1<=n<5] or the surface orientation which is deviated within five degrees from said surface orientation. Mixed semiconductor layers 2-4 having a disordered alignment structure are epitaxially formed on the crystal substrate For example, the Si doped GaAs substrate 1 has the surface orientation which is inclined by three degrees in the direction of (100) from (111)B. An Se doped Al0.25Ca0.25 In0.5P clad layer, a non-doped Ga0.5In0.5P active layer 3 and Zn doped Al0.25Ga0.25 In0.5P clad layer 4 are epitaxially grown sequentially on the substrate An SiO2 current blocking film 5, a P electrode 6 and an N electrode 7 are formed on a double-hetero wafer obtained in this way. Thereafter, the device is cleaved into chips each having the size of 200X300mum, and the semiconductor lasers are obtained. |
| 公开日期 | 1997-08-13 |
| 申请日期 | 1988-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84591]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 近藤 正彦,皆川 重量. 半導体素子. JP2641484B2. 1997-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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