Manufacture of semiconductor laser
文献类型：专利
| 作者 | TSURUTA TORU; OSHIMA MASAAKI |
| 发表日期 | 1989-05-17 |
| 专利号 | JP1989124278A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a single longitudinal-mode laser at a high yield by a method wherein an opening used to form an internal reflection face is formed by using a rectangular etching mask having a width of 20mum or less in a direction perpendicular to an active layer from the upper part of the internal reflection face of an IRI laser so that a yield of a subsequent operation to fill the opening and a growth operation can be improved. CONSTITUTION:A stripe-shaped active layer 7 in a orientation is formed; after that, an etching mask 14 with a rectangular window having one pair of opposite sides with a width of 20mum or less in a direction perpendicular to a stripe direction of the active layer is formed in a position where an internal reflection face 18 is to be formed; a second clad layer 9 and the active layer 7 are etched by using said etching mask; a groove is formed. By this setup, a chemical etching operation can be executed easily; on the other hand, a 211 plane does not appear in the groove; a layer whose quality is identical to the second clad layer 9 can again fill the groove and can be grown with good reproducibility. In addition, because the active layer is not curved at the internal reflection face, a single longitudinal-mode laser having a low threshold electric current nearly equal to that of an ordinary semiconductor laser can be given easily. |
| 公开日期 | 1989-05-17 |
| 申请日期 | 1987-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84593]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU,OSHIMA MASAAKI. Manufacture of semiconductor laser. JP1989124278A. 1989-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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