Manufacture of buried type semiconductor laser
文献类型：专利
| 作者 | OKAYASU MASANOBU; KOUMAE ATSUO; TAKESHITA TATSUYA; KOGURE OSAMU |
| 发表日期 | 1989-08-02 |
| 专利号 | JP1989192184A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried type semiconductor laser |
| 英文摘要 | PURPOSE:To enable an injection current to flow through a stripe section which is not made highly resistive to improve a current injection in efficiency by a method wherein a buried layer is made to be a high resistance layer by neutralizing a conductive impurity by the use of plasma so as to provide a current restricting layer. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type AlxGa1-xAs clad layer 3, an undoped AlyGa1-yAs active layer 4, a p-type AlzGa1-zAs clad layer 5, and a p-type GaAs cap layer 6 are successively grown in crystal on an n-type GaAs substrate 1 through an organic metal vapor growth method or the like. A SiO2 film, a SiNx film, or TiO2 film is formed in stripe on the cap layer 6, and an etching is performed so deep as to expose the side face of the active layer 4, and a second crystal growth is made with the above etching mask unremoved for the formation of an AlGaAs film 7. A very small amount of impurities such as carbon, silicon, and the like contained in the AlGaAs layer 7 is neutralized through the hydrogenation to make the layer 7 a high resistance layer. On the other hand, a region or the layers such as the cap layer 6 and other layers under the etching mask are not made to be highly resistive except their sides because the etching mask above them functions as a mask toward hydrogen plasma. |
| 公开日期 | 1989-08-02 |
| 申请日期 | 1988-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84600]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OKAYASU MASANOBU,KOUMAE ATSUO,TAKESHITA TATSUYA,et al. Manufacture of buried type semiconductor laser. JP1989192184A. 1989-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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