Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; ANAYAMA CHIKASHI |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992079392A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve efficiency by providing current blocking layers separated from each other of a first conduction type which are formed on the top face of a stripe-like protruding part and on the surfaces of an upper clad layer respectively, and by providing a contact layer of a second conduction type which is in contact with the stripe-like protruding part partially, and further, by obtaining a satisfactory bottlenecking of a current. CONSTITUTION:On n-type GaAs current blocking layers 20a, 20b, 20c, a p-type GaAs contact layer 22 of about 4.5mum in thickness is formed so as to embed a stripe-like protruding part in itself. The p-type GaAs contact layer 22 is in contact with a p-type clad layer 16 on the side faces of the stripe-like protruding part, and such current paths as shown with arrows are formed. In this manner, by reducing the thickness of the p-type GaAs contact layer 22 at its middle, the beam is confined in the lateral direction. By the stripe-like protruding part separating the three n-type GaAs current layers 20a, 20b, 20c from each other, bottlenecking of a current is performed. Therefore, the satisfactory confinement in the lateral direction of a beam and the satisfactory bottlenecking of a current can be performed, and a semiconductor laser device having a low threshold current and a high efficiency can be realized. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84605]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,ANAYAMA CHIKASHI. Semiconductor laser device and manufacture thereof. JP1992079392A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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