半導体レーザ素子およびその製造方法
文献类型：专利
| 作者 | 細井 洋治; 小林 正男; 的場 昭大; 坪田 孝志 |
| 发表日期 | 1998-11-06 |
| 专利号 | JP2849423B2 |
| 著作权人 | 沖電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子およびその製造方法 |
| 英文摘要 | PURPOSE:To prevent a leak path and to obtain a high optical output by a method wherein impurities are diffused to a stripe on a current-blocking layer formed on a semiconductor substrate, a current passage is formed and a diffraction grating is formed in the direction which is perpendicular to the current passage. CONSTITUTION:A current-blocking layer 22 using a reverse bias of semiinsulating InP or a semiinsulating semiconductor is grown epitaxially on a P-InP substrate 2 Then, an oxide film 23 is formed on the current-blocking layer 22; after that, a stripe 24 is formed in the reverse mesa direction. After that, impurities are diffused to the stripe 24; a current passage 25 is formed. Then, the oxide film 23 is removed; after that, a diffraction grating 26 is formed in the direction which is perpendicular to the current passage 25. After the diffraction grating 26 is formed, a P-InGaAsP guide layer 27, a P-InGaAsP active layer 28, an n-InGaAsP anti-meltback layer 29, an n-InP clad layer 30 and an n-InGaASP contact layer 31 are crystal-grown sequentially to form a crystal layer 34. Lastly, a P-side electrode 32 and an n-side electrode 33 are formed. |
| 公开日期 | 1999-01-20 |
| 申请日期 | 1990-01-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 沖電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | 細井 洋治,小林 正男,的場 昭大,等. 半導体レーザ素子およびその製造方法. JP2849423B2. 1998-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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