Manufacture of semiconductor laser element
文献类型：专利
| 作者 | WADA HIROSHI; HORIKAWA HIDEAKI; OGAWA HIROSHI; KAWAI YOSHIO |
| 发表日期 | 1988-10-18 |
| 专利号 | JP1988250887A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a DFB laser element which can operate at a high output by crystal growing a quaternary mixed crystal of GaInAsP by a liquid growing method in and on a V-shaped groove, and protecting the grating on a light emitting region with an SiO2 film. CONSTITUTION:A quaternary mixed crystal of GaInAsP is grown by a liquid growth method on a bent active layer 27 to form an optical guide layer 28 having a flat surface, a wavy grating 28a is formed on the flat surface, a stripelike silicon oxide film 29 is formed on a part directly above the light emitting region of the grating 28a, and a clad layer 30 and a cap layer 31 are formed at both sides. Thus, leakage currents to current constriction layers 23, 24 are small to operate it at a high output, a flat grown surface is obtained even on the bent surface, and the grating 28a on the region is protected by an SiO2 film 29. Accordingly, a stable distributed feedback DFB operation is obtained. |
| 公开日期 | 1988-10-18 |
| 申请日期 | 1987-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84615]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,HORIKAWA HIDEAKI,OGAWA HIROSHI,et al. Manufacture of semiconductor laser element. JP1988250887A. 1988-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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