Semiconductor laser
文献类型：专利
| 作者 | TAMURA HIDEO; SUZUKI KAZUO; MATSUMOTO KENJI; KURIHARA HARUKI |
| 发表日期 | 1985-10-14 |
| 专利号 | JP1985202977A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce unevenness of characteristics owing to error of a clevage position to improve a yield, by arranging injection region and non-injection region of current into the active layer alternately and cyclically in the travel direction of laser light. CONSTITUTION:The surface of a P type GaAs substrate 66 is etched to form an uneven cyclic structure on which an N type GaAs current-blocking layer 68 is then formed with liquid phase crystal growing. Next, in the direction perpendicular to the longitudinal direction of the uneven cyclic structure, a groove is cut so that the substrate 66 is cyclically exposed within the groove. A first clad layer 70 of P type AlGaAs, an active layer 72 of P type GaAlAs, a second clad layer 74 of N type AlGaAs and an ohmic layer 76 of N type GaAs are sequentially formed thereon with liquid phase crystal growing. Thereafter, metal electrodes are mounted and the clevage is done. |
| 公开日期 | 1985-10-14 |
| 申请日期 | 1984-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84619]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,SUZUKI KAZUO,MATSUMOTO KENJI,et al. Semiconductor laser. JP1985202977A. 1985-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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