Semiconductor laser device
文献类型：专利
| 作者 | SHIGIHARA, KIMIO |
| 发表日期 | 2015-04-14 |
| 专利号 | US9008141 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer. |
| 公开日期 | 2015-04-14 |
| 申请日期 | 2014-02-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84620]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIGIHARA, KIMIO. Semiconductor laser device. US9008141. 2015-04-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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