Semiconductor light emitting element
文献类型：专利
| 作者 | MATSUMOTO TAKU |
| 发表日期 | 1990-03-07 |
| 专利号 | JP1990066986A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To separate an impurity doped layer form a light emitting layer completely in space and to make it possible to perform a high speed response by doping with an impurity one atomic layer of a barrier layer having a multiple quantum well structure. CONSTITUTION:The following layers are sequentially laminated on an n-type InP substrate 11: an n-type InP clad layer 12; an active layer 13 which undergoes planar doping of Zn and has a multiple quantum well structure of InP/InPGaAsP; a p-type InP clad layer 14; and a p-type InGaAsP contact layer 15. As for a growing method, a multiple growth chamber method and a hydride vapor growth method are used. The supply of InCl is stopped during the growth of a nondoped InP layer which is a barrier layer in the multiple quantum well structure. PH3 and dimethyl zinc are supplied. The growing temperature is 600 deg.C. A circular groove 16 through the active layer 13 is formed, and current constriction is performed. A Zn planar doping layer 22 is formed in an InP barrier layer 21 in the active layer 13. The thickness of the barrier layer is 200Angstrom . The thickness of an InGaAsP well layer 23 is 100Angstrom . The fifteen layers are laminated. Since Zn is hardly diffused into the InGaAsP well layer, both the rise-up time the fall-down time of the light outputs are shortened to a large extent. |
| 公开日期 | 1990-03-07 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84627]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO TAKU. Semiconductor light emitting element. JP1990066986A. 1990-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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