Semiconductor laser device
文献类型：专利
| 作者 | NAKANO YOSHINORI; YOSHIDA JUNICHI; UEHARA SHINGO |
| 发表日期 | 1986-12-02 |
| 专利号 | JP1986271886A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a device characterized by easy manufacture and a high speed switching function, by providing a PNP multilayer structure comprising three or more growing layers on a P-type semiconductor substrate, providing electrodes on the substrate, the uppermost N-type layer and the P-type layer immediately beneath the N-type layer, and using one of the N- and P-type growing layers wherein a junction part is present as an active region. CONSTITUTION:On a P-InP substrate 1, a P-InP buffer layer 2, an Sn doped InGaAsP active layer 3 and an N-InP clad layer 4 are formed. Thereafter, with an SiO2 having a width of 5mum as a mask, proton is projected on both sides of the growing layers, and a high-resistance current limiting region 5 is formed. After the SiO2 film is removed, a P-InP layer 6 and an N-InP layer 7 are sequentially grown. With an SiO2 film as a mask, e.g., Be ions are implanted so as to reach at least the layer 6, and a P regions 8 are formed. Then electrode metal is evaporated on the substrate and N and P regions on the side of the growing layers. By using electrode isolating layers 9 of an SiO2 film, independent electrodes 10, 11 and 12 are formed. An element, which has a resonator with a length of about 250mum, is obtained by cleavage. |
| 公开日期 | 1986-12-02 |
| 申请日期 | 1985-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84630]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NAKANO YOSHINORI,YOSHIDA JUNICHI,UEHARA SHINGO. Semiconductor laser device. JP1986271886A. 1986-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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