半導体レ—ザ
文献类型：专利
| 作者 | 米田 幸司 |
| 发表日期 | 1996-07-08 |
| 专利号 | JP2538258B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ |
| 英文摘要 | PURPOSE:To simplify a manufacturing process and improve a yield by a method wherein a recessed part is built at both sides of a stripe provided at the central part in the lengthwise direction on a current block layer upper face, then a lower clad layer, an active layer, and an upper clad layer are grown. CONSTITUTION:A current block layer 2 of n-type As is formed on a p-type GaAs substrate 1 and a V-shaped stripe 3 is built at the central part thereof. Recessed parts 4 are provided at both sides of the stripe. A lower clad layer 5 of p-type GaAlAs, an active layer 6 of p-type GaAlAs, and an upper clad layer 7 of n-type GaAlAs are successively formed inside the stripe 3 and the both the recessed parts 4 and on the block layer 2 for the formation of a double heterojunction layer. A cap layer of n-type GaAs is formed on the upper clad layer 7 and electrodes are provided on the undersurface of the substrate 1 and the top surface of the cap layer 8. |
| 公开日期 | 1996-09-25 |
| 申请日期 | 1987-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84632]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 米田 幸司. 半導体レ—ザ. JP2538258B2. 1996-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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