Manufacture of semiconductor laser
文献类型：专利
| 作者 | MOGI NAOTO; OKAJIMA MASASUE; MUTOU YUUHEI |
| 发表日期 | 1984-05-31 |
| 专利号 | JP1984094484A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate the increase in the diffused region caused by the decrease in the mask performance by forming a Zn-added P type cap layer in a mesa stripe state on the surface, heat treating it in this state to diffuse Zn. CONSTITUTION:An N type GaAlAs clad layer 2, an N type GaAlAs active layer 3, an N type GaAlAs clad layer 4, and Zn-added P type GaAs cap layer 5 are sequentially formed on an N type GaAs substrate Then, it is etched to allow the layer 5 to remain in a stripe state. Then, it is heat treated as it is. The Zn contained in the layer 5 is diffused downwardly in the layer 5 by this treatment. The diffusion is finished at the time point when the end of diffusion substantially crosses the layer 3. The Zn diffusion thus performed is carried out in the state that almost no stress exist without mask. Accordingly, the diffused layer may be formed preferably with good reproducibility. |
| 公开日期 | 1984-05-31 |
| 申请日期 | 1982-11-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84634]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,OKAJIMA MASASUE,MUTOU YUUHEI. Manufacture of semiconductor laser. JP1984094484A. 1984-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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