Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; HAYASHI HIROSHI; MORIMOTO TAIJI; YANO MORICHIKA |
| 发表日期 | 1985-11-05 |
| 专利号 | JP1985220982A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To oscillate the titled element at a fundamental transverse mode up to a high output by laminating a laser operating section having a double hetero- junction structure on a substrate in which a groove in width narrower than a groove in wide width and shallow depth is formed at the central section of the groove in wide width and shallow depth. CONSTITUTION:An N type current stopping layer 2 is deposited on a P conduction type substrate 1, and a groove in width w1 and depth D is formed from the surface of the layer 2. A V-shaped 10 reaching to the substrate 1 in width w2 is formed at the central section of the groove 9. A laser operating section having double hetero-junction structure consisting of a P-clad layer 3, a P-active layer 4, an N-clad layer 5 and an N-cap layer 6 is laminated on the substrate The layer 4 is curved gently just above the grooves 9, 10. Consequently, the oscillation of a fundamental transverse mode is obtained. Currents can be flowed only through the central sections of the grooves 9, 10. The oscillation of the fundamental transverse mode can be maintained up to the state of a high output by said two effects. |
| 公开日期 | 1985-11-05 |
| 申请日期 | 1984-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84637]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,HAYASHI HIROSHI,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1985220982A. 1985-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。