Semiconductor laser and its manufacture
文献类型：专利
| 作者 | MIYAZAWA SEIICHI |
| 发表日期 | 1989-07-27 |
| 专利号 | JP1989187891A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To absorb damages of a semiconductor crystal caused by dry-etching for forming a ridge form and a stress caused by the difference in thermal expan sion coefficient between the semiconductor crystal and a surface protective film and realize the long life of a semiconductor laser with the ridge form by providing a semiconductor layer between a cladding layer and a surface insulating film. CONSTITUTION:A protective semiconductor layer 16 made of P-type GaAs is formed on a clad layer 13. The thickness of the semiconductor layer 16 is 0.3mum. The thickness is approximately uniform over the whole width. The semiconductor layer 16 is formed after the cladding layer 13 and an electrode contact layer 6 are partially removed by dry-etching. The layer 16 has an effect of absorbing crystal damages of the clad layer 13 caused by etching and improves the life because of the following two points: (1) defects existing in the recesses (thin parts) 15 of the cladding layer 13 are reduced by the growth of the protective semiconductor layer 16 and the long life can be realized, (2) a stress caused by the difference in thermal expansion coefficient between an insulating film (Si3N4 film) 7 and the clad layer 13 is absorbed so that the long life can be assured. |
| 公开日期 | 1989-07-27 |
| 申请日期 | 1988-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84647]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | MIYAZAWA SEIICHI. Semiconductor laser and its manufacture. JP1989187891A. 1989-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。