Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | HONDA KAZUO; HIRATA SHOJI; OHATA TOYOJI |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296588A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To improve the stability of operation and lengthen life, and to manufacture the title semiconductor laser easily by arranging a distributed feedback means to a striped shape while the surfaces of a base body on both sides of the distributed feedback means to a plane shape. CONSTITUTION:A P-type AlGaAs clad layer 22, a GaAs active layer 23 and an N-type AlGaAs guide layer 24 are grown on a P-type GaAs substrate in an epitaxial manner is succession. A positive type photo-resist layer 32 is applied, the latent images of a diffraction grating are exposed 33 through a holographic exposure method, and lap exposure 34 is executed to the photo-resist layer 32 through the mask of a striped pattern, and developed, thus forming a plurality of rectangular resist masks 35. The guide layer 24 is etched selectively by a proper etchant to shape rib structure 36 while periodic irregularities, a diffraction grating 25, is formed on the surfaces of the ribs along the progressive direction of beams. Surfaces 24a on both sides of rib structure 36 are formed to a plane shape and etched up to thickness, which does not reach the active layer. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | HONDA KAZUO,HIRATA SHOJI,OHATA TOYOJI. Distributed feedback type semiconductor laser. JP1987296588A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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